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Scanning Electron Microscopy and X-Ray Microanalysis: Fourth Edition

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This thoroughly revised Fourth Edition offers a comprehensive introduction to scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS), electron backscatter diffraction analysis (EBSD), and focused ion beams. It serves as an authoritative resource for students and researchers, while also catering to SEM operators and professionals such as engineers, technicians, and scientists. Each chapter has been updated to address practical needs, shifting focus from the design and physical operation of instruments to the software-controlled parameters that optimize performance. The text emphasizes understanding critical factors like beam energy, beam current, and detector characteristics, alongside ancillary techniques like EDS and EBSD. With 13 years since the last edition, it reflects advancements in instrumentation and analysis techniques, highlighting the SEM's evolution into a powerful platform for simultaneous evaluation of morphology, elemental composition, and crystal structure. New topics include field emission guns, high-resolution capabilities, variable pressure SEM operation, and high throughput silicon drift detector (SDD-EDS) x-ray spectrometers. The book also encourages users to engage critically with software tools, including NIH ImageJ-Fiji for image processing and NIST DTSA II for quantitative EDS analysis. It is organized into self-contained modules, making it accessible for a diverse audience, a

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Scanning Electron Microscopy and X-Ray Microanalysis: Fourth Edition, Joseph I. Goldstein, Dale E. Newbury, Joseph R. Michael, Nicholas W. M Ritchie, John Henry J. Scott, David C Joy

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Année de publication
2017
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Langue
Anglais
Publié
2017
Format
rigide
Pages
550
ISBN10
149396674X
ISBN13
9781493966745
Séries
Description
This thoroughly revised Fourth Edition offers a comprehensive introduction to scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS), electron backscatter diffraction analysis (EBSD), and focused ion beams. It serves as an authoritative resource for students and researchers, while also catering to SEM operators and professionals such as engineers, technicians, and scientists. Each chapter has been updated to address practical needs, shifting focus from the design and physical operation of instruments to the software-controlled parameters that optimize performance. The text emphasizes understanding critical factors like beam energy, beam current, and detector characteristics, alongside ancillary techniques like EDS and EBSD. With 13 years since the last edition, it reflects advancements in instrumentation and analysis techniques, highlighting the SEM's evolution into a powerful platform for simultaneous evaluation of morphology, elemental composition, and crystal structure. New topics include field emission guns, high-resolution capabilities, variable pressure SEM operation, and high throughput silicon drift detector (SDD-EDS) x-ray spectrometers. The book also encourages users to engage critically with software tools, including NIH ImageJ-Fiji for image processing and NIST DTSA II for quantitative EDS analysis. It is organized into self-contained modules, making it accessible for a diverse audience, a